Characteristics of Indium Tin Oxide Films Deposited by DC and RF Magnetron Sputtering
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概要
- 論文の詳細を見る
Conductive and transparent indium tin oxide (ITO) films with a thickness of 100 nm were deposited onto glasses and Si(100) wafers by direct current (DC) and radio frequency (RF) magnetron sputtering. The formation and the annealing effect of films were studied by the measurements of resistivity, optical-transmission, X-ray diffraction and scanning tunneling microscopy (STM). Experimental studies indicated those films deposited by DC sputtering in a 1% O2 in an O2/Ar gas mixture, without annealing, have the lowest resistivity and the highest transmission. In addition, the films deposited by RF sputtering in a 3% O2 in an O2/Ar gas mixture, with annealing in air at 300°C for 2 h, have better resistivity and transmission.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2001-05-15
著者
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NEJO Hitoshi
National Institute for Materials Science
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OHGI Taizo
National Institute for Materials Science
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DENG Wenli
National Research Institute for Metals
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Fujita Daisuke
National Institute For Material Science
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Nejo Hitoshi
National Research Institute for Metals, 1-2-1 Sengen, Tsukuba 305-0047, Japan
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