Crystallization of SrBi2Ta2O9 Thin Films in N2 Ambient by Chemical Solution Deposition Method

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概要

• 論文の詳細を見る

• Structural and electrical properties of SrBi2Ta2O9 (SBT) thin films crystallized upon annealing in an N2 ambient were investigated. These thin films were prepared on Pt/TiO2/SiO2/Si substrates by the chemical solution deposition (CSD) method. The films crystallized in N2 after calcination at a high O2 partial pressure in an N2/O2 mixed ambient showed good ferroelectric properties with remanent polarization $2P_{\text{r}}=13\text{--}14$ $\mu$C/cm2, coercive field $2E_{\text{c}}=70\text{--}80$ kV/cm, and leakage current density less than $1\times 10^{-7}$ A/cm2 at an applied voltage of 3 V@. These ferroelectric properties are the same as those of the SBT crystallized in O2. However, the films crystallized in N2 after calcination at a low O2 partial pressure in an N2/O2 mixed ambient did not form SBT@. TDS data showed that the carbon content of the film calcined in poor O2 was higher than that of the film calcined in rich O2. These results showed that the carbon residue within the film might disturb the formation of SBT.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-04-15

著者

• Nagata Masaya

  Functional Devices Development Center Sharp Corporation

• Ogata Nobuhito

  Functional Devices Development Center Sharp Corporation

• Nagata Masaya

  Functional Devices Development Center, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan

• Ogata Nobuhito

  Functional Devices Development Center, Sharp Corporation, 273-1 Kashiwa, Kashiwa, Chiba 277-0005, Japan

関連論文

• Study of Ag Addition to YBa_2Cu_3O_ Films Prepared using Electrophoretic Deposition
• Fine-Grained SrBi_2Ta_2O_9 Thin Films by Low Temperature Annealing
• Fine-Grained SrBi_2Ta_2O_9 Thin Films by Low Temperature Annealing
• Crystallization of SrBi2Ta2O9 Thin Films in N2 Ambient by Chemical Solution Deposition Method

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