Experimental Studies of 90° Bragg Reflection from a Sub-Micron InxGa1-xAs Single-Crystal Film Deposited on a GaAs Substrate
スポンサーリンク
概要
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Experimental studies of a 90° Bragg reflection from a thin surface InxGa1-xAs layer grown on a GaAs substrate are reported and discussed. The experiment was performed on the undulator beamline BL29XU at the SPring-8. Two-dimensional (angular deviation from 90° position versus incident synchrotron radiation energy) diffraction intensity profiles were collected from six samples with different In contents ($x=0.2\text{--}1.5$%) and different layer thicknesses (0.5–1.5 $\mu$m). Observation of the layer performing as a thin-film optical interferometer (filter) and a discrepancy between layer-substrate lattice mismatch values obtained from standard (400) and extreme 90° reflection measurements (using the same radiation energy) are discussed.
- 2001-02-15
著者
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Tamasaku Kenji
Coherent X-ray Optics Laboratory Harima Institute Riken/spring-8
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ISHIKAWA Tetsuya
Coherent X-Ray Optics Laboratory, Harima Institute, RIKEN/SPring-8
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Usher Brian
Department Of Electronic Engineering La Trobe University
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Nikulin Andrei
Department Of Physics Monash University
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Tamasaku Kenji
Coherent X-Ray Optics Laboratory, Harima Institute,RIKEN/SPring-8, Kouto 1-1-1, Mikazuki-cho, Sayo-gun, Hyogo 679-5148, Japan
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Ishikawa Tetsuya
Coherent X-Ray Optics Laboratory, Harima Institute,RIKEN/SPring-8, Kouto 1-1-1, Mikazuki-cho, Sayo-gun, Hyogo 679-5148, Japan
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Nikulin Andrei
Department of Physics, Monash University, Clayton, Vic. 3800, Australia
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Usher Brian
Department of Electronic Engineering, La Trobe University, Bundoora, 3083, Australia
関連論文
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