A New Type of Stacking Fault in $\beta$-SiC
スポンサーリンク
概要
- 論文の詳細を見る
A new type of stacking fault was found in ultrapure and ultrafine $\beta$-SiC in images obtained by high-resolution transmission electron microscopy (HR-TEM). The $\beta$-SiC particles were prepared by the plasma chemical vapor deposition (plasma-CVD) method and quenched rapidly from the gas phase. This type of stacking fault disappeared in the specimen heated at 1850°C for 10 min in Ar atmosphere. The proposed stacking fault was examined from the viewpoints of energy and synthetic condition.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-02-15
著者
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Ikuhara Yuichi
Department of Material Science, The University of Tokyo
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Ma Xiuliang
Department of Materials Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Ja
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Shirahata Naoto
Graduate School Of Science And Technology Kyoto Institute Of Technology
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Shirahata Naoto
Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
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Ma Xiuliang
Department of Materials Science, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Kijima Kazunori
Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan
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Kijima Kazunori
Graduate School of Science and Technology, Kyoto Institute of Technology
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Ikuhara Yuichi
Department of Materials Science, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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