Thermal Change of Unstable Stacking Faults in $\beta$-SiC
スポンサーリンク
概要
- 論文の詳細を見る
The thermal change of unstable stacking faults (USFs) in ultrafine and highly pure $\beta$-SiC powder synthesized by the plasma chemical vapor deposition (plasma-CVD) method was studied by high-resolution transmission electron microscopy (HR-TEM). The number of USFs, which were frequently observed in as-synthesized powder, decreased at elevated temperatures in an Ar atmosphere. In contrast, the number of general stacking faults (GSFs) increased with decreasing number of USFs. Moreover, a type of stacking fault that was geometrically more unstable than USF was observed in the specimen after heat treatment. In the present study, the annihilation process of USFs observed in the specimen before heat treatment is discussed.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-06-15
著者
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Ma Xiuliang
Depamtment Of Materials Science The Unuversity Of Tokyo
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Ikuhara Yuichi
Department of Material Science, The University of Tokyo
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Kijima Kauznori
Graduate School Of Science And Technology Kyoto Institute Of Technology
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Shirahata Naoto
Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyo
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Kijima Kazunori
Graduate School of Science and Technology, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyo
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Ma Xiuliang
Department of Materials Science, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Ja
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Ikuhara Yuichi
Depamtment Of Materials Science The Unuversity Of Tokyo
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Shirahata Naoto
Graduate School Of Science And Technology Kyoto Institute Of Technology
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Kijima Kazunori
Graduate School of Science and Technology, Kyoto Institute of Technology
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