PEM Effect in Silicon

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概要

• 論文の詳細を見る

• The PEM effect in silicon was observed by using two p-type specimens doped with boron, which have the charge carrier concentration of $1.96{\times}10^{13}$ and $3.66{\times}10^{13}$ cm-3 respectively, at 300°K. From the variation with illumination and with temperature, it was found that the energy gap of the recombination center was about 0.35 eV. The spectral dependence of the PEM effect together with that of the photoconductive effect indicated that the diffusion process controlled by the concentration gradient was effective in PEM effect.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1964-11-15

著者

• Ishigame Mareo

  The Research Institute For Scientific Measurements Tohoku University

• Ishigame Mareo

  The Research Institute for Scientific Measurements, Tōhoku University

関連論文

• Infrared Properties of Yttrium Oxide
• PEM Effect in Germanium
• PEM Effect in Silicon
• PEM Effect in Silicon

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