PEM Effect in Germanium
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概要
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The PEM effect in germanium was observed by using two specimens G_1 and G_2, 7×10^<12>cm^<-3> and 8×10^<12>cm^<-3> in impurity concentration and nearly equal in their surface characteristics. The variation of the PEM voltage with magnetic field showed that the linearity held for the small magnetic field, but it saturated for the strong field. From the results of observation, it was found that the energy level of the recombination centers exists at E_t-E_v≈0.35 eV. The spectral dependence of the PEM effect together with that of the photoconductive effect indicated that the half value wavelength of the PEM effect was shorter than that of the photoconductive effect and that a peak was found at 1.9 micron in the latter case.
- 社団法人応用物理学会の論文
- 1964-05-15
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関連論文
- Infrared Properties of Yttrium Oxide
- PEM Effect in Germanium
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- PEM Effect in Silicon