Application of Stacked ZnO Films as a Window Layer to Cu(InGa)Se2-Based Thin-Film Modules

概要

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To overcome the disadvantages of DC sputtering while keeping itsadvantages, a stacked structure of ZnO films as a window layer hasbeen developed for application to Cu(InGa)Se2 (CIGS)-basedthin-film modules. Application of multilayered, 2 wt%Al2O3-doped ZnO (AZO) films prepared from a 2 wt%Al2O3-doped ZnO ceramic target and use of a combination ofRF and DC sputtering techniques (i.e., sputtering conditions of RF300 W/DC 1 A/DC 1 A) can lead to better crystallinity andelectrical properties and, as a result, an improved device performanceof CIGS-based thin-film modules. To improve the humidity resistance ofthe ZnO window layer, which is the top layer of CIGS-based thin-filmmodules, AZO is replaced with 5.7 wt% Ga2O3-doped ZnO(GZO) prepared from a 5.7 wt% Ga2O3-doped ZnO ceramictarget. By adjusting the stacked structure and the layer thickness byDC sputtering, an improvement in device performance, especially thefill factor (FF), is achieved with the stacked structure of AZO(base)/AZO (middle)/0.6 GZO (top) as the window layer, and a totalthickness of about 600 nm is realized, which means a thinner (about60% of AZO top layer thickness) top layer.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
1999-07-15