Influences of Sputtering Power and Substrate Temperature on the Properties of RF Magnetron Sputtered Indium Tin Oxide Thin Films

概要

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Indium tin oxide thin films have been deposited on glass substrates usingrf magnetron sputtering at different power densities (0.27–0.80 W/cm2)and at different substrate temperatures (RT-250) °C. Film structure,crystallite size and orientation, optical absorption and bandgap have beenstudied to characterize the films. Carrier concentration and Hall mobilityhave been determined by Hall effect. X-ray diffraction (XRD) analysisof room temperature (RT) deposited samplesreveals a structural change from amorphous to mixedamorphous/polycrystalline structure with <100> preferred orientation withincreasing rf power density. The increase in substrate temperature resultsin a similar structural evolution from amorphous to a mixed phase followed,at temperatures higher than 200°C, by a polycrystalline phasewith <111> orientation. The study clearly indicates that ITO films dominated byoxygen vacancies prefer to grow with <100> oriented crystallites whereasthe <111> oriented films are characterized by a moreeffective doping by tin.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
1999-06-15