Electrical Activity of Defects Induced by Oxygen Precipitation in Czochralski-Grown Silicon Wafers

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概要

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• Majority and minority carrier traps introduced in p-type Czochralski-grown silicon (CZ-Si) wafers during two-step low-high temperature annealing procedures were investigated using deep level transient spectroscopy (DLTS). It was determined that the platelike silicon oxide precipitate surface and the punch-out dislocations introduce majority carrier traps having deep energy levels (EV+0.43 eV and EV+0.26 eV, repectively) in the Si band gap in concentrations proportional to the relevant defect density. The minority carrier traps are positioned at EC-0.42 eV and EC-0.22 eV. The majority carrier trap density on the surface of the platelikeprecipitate was estimated as ∼3×109 cm-2 and thelinear trap density for the punch-out dislocations as ∼ 4×104 cm-1.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1999-06-15

著者

• Matsumoto Kei

  Research And Development Department Komatsu Electronic Metals Co. Ltd.

• MCHEDLIDZE Teimouraz

  Research and Development Department, Komatsu Electronic Metals Co., Ltd.

• Asano Eiichi

  Research And Development Department Komatsu Electronic Metals Co. Ltd.

• Mchedlidze Teimouraz

  Research and Development Department, Komatsu Electronic Metals Co., Ltd.,

関連論文

• Electrical Activity of Defects Induced by Oxygen Precipitation in Czochralski-Grown Silicon Wafers
• Electrical Activity of Defects Induced by Oxygen Precipitation in Czochralski-Grown Silicon Wafers

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