Electrical Activity of Defects Induced by Oxygen Precipitation in Czochralski-Grown Silicon Wafers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-06-15
著者
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Mchedlidze T
Institute For Materials Research Tohoku University
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Matsumoto Kei
Research And Development Department Komatsu Electronic Metals Co. Ltd.
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MCHEDLIDZE Teimouraz
Research and Development Department, Komatsu Electronic Metals Co., Ltd.
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ASANO Eiichi
Research and Development Department, Komatsu Electronic Metals Co., Ltd.
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Asano Eiichi
Research And Development Department Komatsu Electronic Metals Co. Ltd.
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Mchedlldze Teimuraz
Institute For Materials Research Tokoku Universily
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Mchedidze Teimouraz
Research and Development Department, Komatsu Electronic Metals Co., Ltd.
関連論文
- Properties of Platinum-Hydrogen Complexes in Silicon : an ESR Study : Semiconductors
- ESR Spectra from Platinum-Hydrogen Pair in Silicon : Semiconductors
- Properties of an Iron-Vacancy Pair in Silicon
- Electrical Activity of Defects Induced by Oxygen Precipitation in Czochralski-Grown Silicon Wafers
- Electrical Activity of Defects Induced by Oxygen Precipitation in Czochralski-Grown Silicon Wafers