Highly Resolved Maskless Patterning on InP by Focused Ion Beam Enhanced Wet Chemical Etching

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概要

• 論文の詳細を見る

• The fabrication of high resolution patterns on InP-substrates byfocused ion beam implantation and selective wet chemical etching hasbeen investigated. InP acts as positive resist for Ga+ focusedion beam exposure and development by HF. The values of contrast andsensitivity have been determined to 12 and 1.5×1013 cm-2, respectively. By this technique short period line gratings with a linewidth of 30 nm have been fabricated.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1999-10-15

著者

• Forchel Alfred

  Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

• Reithmaier Johann

  Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

• König Harald

  Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

関連論文

• Highly Resolved Maskless Patterning on InP by Focused Ion Beam Enhanced Wet Chemical Etching
• Highly Resolved Maskless Patterning on InP by Focused Ion Beam Enhanced Wet Chemical Etching

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