Silicon Quantum Dot in a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) Structure
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概要
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We have fabricated a 200 nm quantum dot in a silicon Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) structure. Confining gates situated on top of a 10 nm oxide deplete the electron gas created by an inversion gate 70 nm away from the Si-SiO2 interface. Measurements indicate that the size of the dot can be tuned by the gates. Furthermore, we observe conductance fluctuations in the gate characteristic which are indicative of single-electron behavior.
- 1999-01-30
著者
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Rack Mary
Center For Solid State Electronics Research Arizona State University
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FERRY David
Center for Solid State Electronics Research & Department of Electrical Engineering, Arizona State Un
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Khoury Maroun
Center For Solid State Electronics Research Arizona State University
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Gunther Allen
Center For Solid State Electronics Research Arizona State University
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Ferry David
Center for Solid State Electronics Research, Arizona State University,
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Jr. David
Center for Solid State Electronics Research, Arizona State University,
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Rack Mary
Center for Solid State Electronics Research, Arizona State University,
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Khoury Maroun
Center for Solid State Electronics Research, Arizona State University,
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