An Observation of Oxygen Precipitation Retardation Phenomenon Induced by 450°C Anneal in Czochralski Silicon

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概要

• 論文の詳細を見る

• Two-step (450° C–1000° C) and three-step (1150° C–450° C–1000° C) annealing experiments were carried out to study oxygen precipitation behavior in Czochralski silicon. A distinct retardation of precipitation was observed during the two-step annealing, while the retardation during the three-step annealing was less pronounced. In the three-step annealing, the first high temperature (1150° C) annealing in a N2 ambient caused the retardation of precipitation to occur at short nucleation times. The microstructure characteristics as a function of nucleation (450° C) annealing time were similar in the two-step and three-step annealed samples.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1997-08-15

著者

• Kung Chung-yuan

  Electrical Engineering Department Chung Hsing University

• Horng Ray

  Institute Of Electrical Engineering Da-yeh Institute Of Technology

• Liu Chin

  Electrical Engineering Department Chung Hsing University

• Hsu Wei

  Electrical Engineering Department Chung Hsing University

• Kung Chung-Yuan

  Electrical Engineering Department, Chung Hsing University, Taichung, Taiwan, Republic of China

関連論文

• An Observation of Oxygen Precipitation Retardation Phenomenon Induced by 450℃ Anneal in Czochralski Silicon
• An Observation of Oxygen Precipitation Retardation Phenomenon Induced by 450°C Anneal in Czochralski Silicon

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