An Observation of Oxygen Precipitation Retardation Phenomenon Induced by 450℃ Anneal in Czochralski Silicon
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-08-15
著者
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Kung Chung-yuan
Electrical Engineering Department Chung Hsing University
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Horng Ray
Institute Of Electrical Engineering Da-yeh Institute Of Technology
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HSU Wei
Electrical Engineering Department, Chung Hsing University
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LIU Chin
Electrical Engineering Department, Chung Hsing University
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Hsu W
Electrical Engineering Department Chung Hsing University
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Liu Chin
Electrical Engineering Department Chung Hsing University
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Hsu Wei
Electrical Engineering Department Chung Hsing University
関連論文
- An Observation of Oxygen Precipitation Retardation Phenomenon Induced by 450℃ Anneal in Czochralski Silicon
- An Observation of Oxygen Precipitation Retardation Phenomenon Induced by 450°C Anneal in Czochralski Silicon