On the Electron Photoionization Cross-Section of EL2 in GaAs

概要

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From an analysis of literature data as well as our own measurements it is shown that the recently published electron photoionization cross-section $\sigma_{n}^{0}$($\lambda$, $T$) of the EL2-as determined by photocapacitance techniques-includes major contributions of the intracentre transition cross-section $\sigma_{n}^{*}$($\lambda$, $T$). So the $\sigma_{n}^{0}$($\lambda$, $T$) as determined by photocapacitance measurements is essentially identical to the $\sigma_{n}$($\lambda$, $T$) observed in optical absorption experiments and can be used in the analysis of the latter.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
1989-06-20