Optical Mapping of the Total EL2-Concentration in Semi-Insulating GaAs-Wafers

スポンサーリンク

概要

• 論文の詳細を見る

• In semi-insulating GaAs wafers the distribution of the total EL2, independent of its charge state, was determined by purely optical absorption measurements. In all (Czochralski-grown) wafers studied the radial distribution of the total EL2 is W-shaped and shows fourfold symmetry. So the fluctuations of the neutral EL2-concentration seen in the usual near infrared transmission mapping reflect essentially the inhomogeneity of the total EL2 distribution. The mean EL2+ concentration in all wafers was close to typical C- and Zn-concentrations in s.i. GaAs ($\approx 2{\cdot}10^{15}$ cm-3).

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-06-20

著者

• Winnacker A.

  Siemens Corporate Research and Development Laboratories, Paul-Gossen-Str. 100, D-8520 Erlangen, West Germany

• Zach F.

  Siemens Corporate Research and Development Laboratories, Paul-Gossen-Str. 100, D-8520 Erlangen, West Germany

関連論文

• Optical Mapping of the Total EL2-Concentration in Semi-Insulating GaAs-Wafers
• On the Electron Photoionization Cross-Section of EL2 in GaAs

スポンサーリンク