Photoluminescence in VAD SiO2:GeO2 Glasses Sintered under Reducing or Oxidizing Conditions

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概要

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• The atmosphere dependence of photoluminescence (PL) centers produced in SiO2:GeO2 glasses was examined by preparing VAD SiO2:GeO2 preform rods with changing the sintering atmosphere systematically from reducing to oxidizing. Four types of luminescence centers could be detected for samples sintered under H2/He$=$1/20, He or O2/He$=$1/10 atmospheres. The atmosphere dependence of luminescence intensity suggests that reduced species of Ge and/or Si are responsible for the luminescence centers. Ge(II) dissolved in a SiO2 network, which was characterized as a lone pair of electrons located on a Ge atom with 2 or 3 oxygen neighbors. Si(II) dissolved in a silica network, and the Si and/or Ge cluster and \includegraphics{dummy.eps} were proposed for the possible structural models of PL centers.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1989-04-20

著者

• Kawazoe Hiroshi

  Department Of Inorganic Materials Tokyo Institute Of Technology

• YAMANE Masayuki

  Department of Materials Science, Faculty of Engineering, Kitami Institute of Technology

• Kohketsu Masami

  Department of Inorganic Materials, Tokyo Institute of Technology, Ohokayama, Meguro-ku, Tokyo 152

• Awazu Koichi

  Department of Inorganic Materials, Tokyo Institute of Technology, Ohokayama, Meguro-ku, Tokyo 152

• Kawazoe Hiroshi

  Department of Inorganic Materials, Tokyo Institute of Technology, Ohokayama, Meguro-ku, Tokyo 152

• Yamane Masayuki

  Department of Inorganic Materials, Tokyo Institute of Technology, Ohokayama, Meguro-ku, Tokyo 152

• Kawazoe Hiroshi

  Department of Industrial Chemistry, Faculty of Technology, Tokyo Metropolitan University

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• Photoluminescence in VAD SiO2:GeO2 Glasses Sintered under Reducing or Oxidizing Conditions
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• Photoluminescence Centers in VAD SiO2 Glasses Sintered under Reducing or Oxidizing Atmospheres

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