Multi-Beam Concepts for Nanometer Devices
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概要
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To overcome the throughput limitations in electron beam nanolithography, a multi beam system is proposed. Theoretical considerations show that this e-beam comb-probe printer with 1024 probes will be capable of combining 25 nm resolution with a maximum beam current of 5 $\mu$A. This allows an exposure speed of 0.1 cm2/s, which is orders of magnitude superior to today's most advanced equipment. In addition, the multi beam principle is considered for nanometer pattern inspection and for ion-beam techniques. The basic concepts for these applications are presented. Practical feasibility investigations are the subject of current research.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1989-10-20
著者
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Schaffer P.
Institut Fur Angewandte Physik Universitat Tubingen
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BENNECKE W.
Institut fur Mikrostrukturtechnik der FhG
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SCHNAKENBERG U.
Institut fur Mikrostrukturtechnik der FhG
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Knapek E.
Siemens Ag Forschung Fur Materialwissenschaften Und Elektronik
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Lischke B.
Siemens Ag Forschung Fur Materialwissenschaften Und Elektronik
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Brunner M.
Siemens Ag Forschung Fur Materialwissenschaften Und Elektronik
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Heuberger A.
Institut für Mikrostrukturtechnik der FhG, 1000 Berlin, FRG
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Herrmann K.
Institut für Angewandte Physik, Universität Tübingen, 7400 Tübingen, FRG
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Schnakenberg U.
Institut für Mikrostrukturtechnik der FhG, 1000 Berlin, FRG
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Herrmann K.
Institut für Angewandte Physik, Universität Tübingen, 7400 Tübingen, FRG
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- Multi-Beam Concepts for Nanometer Devices