Transparent Conductive Cu-doped ZnSe Film Deposited at Room Temperature Using Compound Sources Followed by Laser Annealing

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概要

• 論文の詳細を見る

• The evaporation of ZnSe and Cu2Se powders was used to deposit a Cu-doped ZnSe film on a glass substrate at room temperature; this was followed by laser beam ($\lambda = 355$ nm) annealing. The film consisted of a zinc blende, ZnSe, crystalline single phase with the chemical composition (Zn0.9Cu0.1)Se. Over 70% optical transmittance was obtained in the green–red region. The film had a p-type polarity with a conductivity of 0.45 S cm-1 and a workfunction of 4.7 eV. P–n diodes fabricated with the film on an n-type ZnSe:Cl layer showed rectangular behavior with a small turn-on voltage of ${\sim}1.5$ V, which is plausibly explained by development of an impurity band.

• Japan Society of Applied Physicsの論文
• 2007-10-25

著者

• ORITA Masahiro

  R&D Center, HOYA Corporation

• Orita Masahiro

  R&D Center, HOYA Corporation, 3-3-1 Musashino, Akishima, Tokyo 196-8510, Japan

• Narushima Takashi

  R&D Center, HOYA Corporation, 3-3-1 Musashino, Akishima, Tokyo 196-8510, Japan

• Yanagita Hiroaki

  R&D Center, HOYA Corporation, 3-3-1 Musashino, Akishima, Tokyo 196-8510, Japan

• Yanagita Hiroaki

  R&D Center, HOYA Corporation, 3-3-1 Musashino, Akishima, Tokyo 196-8510, Japan

• Narushima Takashi

  R&D Center, HOYA Corporation, 3-3-1 Musashino, Akishima, Tokyo 196-8510, Japan

関連論文

• New Transparent Conductive Oxides with YbFe_2O_4 Structure
• Transparent Conductive Cu-doped ZnSe Film Deposited at Room Temperature Using Compound Sources Followed by Laser Annealing

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