Evaluation of AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate in Power Factor Correction Circuit

概要

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A new device of high-power AlGaN/GaN heterostructure field-effect transistors (HFETs) fabricated on a Si substrate is proposed. Its application of the power factor correction (PFC) circuit is presented for the first time. The AlGaN/GaN HFETs fabricated on the Si substrate with a gate width of 152 mm exhibited a breakdown voltage of more than 800 V, an on-resistance of 65 m$\Omega$, and a maximum drain current of more than 50 A. As for the results of the experiment on the PFC at 200 W and $ f = 109$ kHz, a power conversion efficiency of 95.2% was obtained. This value was about 1% higher than that of the PFC-circuit-using Si devices.
2007-08-25