Machida Osamu | Advanced Technology Development Division, Engineering Headquarters, Sanken Electric Co., Ltd., 3-6-3 Kitano, Niiza, Saitama 352-8666, Japan
スポンサーリンク
概要
- Machida Osamuの詳細を見る
- 同名の論文著者
- Advanced Technology Development Division, Engineering Headquarters, Sanken Electric Co., Ltd., 3-6-3 Kitano, Niiza, Saitama 352-8666, Japanの論文著者
関連著者
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Kaneko Nobuo
Advanced Technology Development Division, Engineering Headquarters, Sanken Electric Co., Ltd., 3-6-3 Kitano, Niiza, Saitama 352-8666, Japan
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Iwakami Shinichi
Advanced Technology Development Division, Engineering Headquarters, Sanken Electric Co., Ltd., 3-6-3 Kitano, Niiza, Saitama 352-8666, Japan
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Machida Osamu
Advanced Technology Development Division, Engineering Headquarters, Sanken Electric Co., Ltd., 3-6-3 Kitano, Niiza, Saitama 352-8666, Japan
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Yanagihara Masataka
Advanced Technology Development Division, Engineering Headquarters, Sanken Electric Co., Ltd., 3-6-3 Kitano, Niiza, Saitama 352-8666, Japan
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Ehara Toshihiro
Advanced Technology Development Division, Engineering Headquarters, Sanken Electric Co., Ltd., 3-6-3 Kitano, Niiza, Saitama 352-8666, Japan
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Goto Hirokazu
Advanced Technology Development Division, Engineering Headquarters, Sanken Electric Co., Ltd., 3-6-3 Kitano, Niiza, Saitama 352-8666, Japan
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Iwabuchi Akio
Advanced Technology Development Division, Engineering Headquarters, Sanken Electric Co., Ltd., 3-6-3 Kitano, Niiza, Saitama 352-8666, Japan
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Izawa Yoshimichi
Advanced Technology Development Division, Engineering Headquarters, Sanken Electric Co., Ltd., 3-6-3 Kitano, Niiza, Saitama 352-8666, Japan
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Baba Ryohei
Advanced Technology Development Division, Engineering Headquarters, Sanken Electric Co., Ltd., 3-6-3 Kitano, Niiza, Saitama 352-8666, Japan
著作論文
- Evaluation of AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate in Power Factor Correction Circuit
- 20 m$\Omega$, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate