Semiconductor Light-Emitting Diodes with Separated Current-Injection and Light-Emitting Areas

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概要

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• A semiconductor light-emitting diode (LED) in which blocking of light by an opaque metal electrode, a serious problem hindering improvements in LED efficiency, could be completely eliminated is reported. The principle behind this is the spatial separation of the current-injection area from the light-emitting area by selectively forming the metal electrode on a high-bandgap-energy facet of a nonplanar substrate composed of multiple facets with varying bandgap energies. In this device, carriers injected from the opaque electrode are swept away from the electrode area towards the adjacent low-bandgap-energy area where they recombine by a potential energy gradient-driven carrier transfer process.

• Japan Society of Applied Physicsの論文
• 2006-09-25

著者

• Wang Xue-Lun

  Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, Tsukuba, Ibaraki 305-8568, Japan

関連論文

• Semiconductor Light-Emitting Diodes with Separated Current-Injection and Light-Emitting Areas

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