Wurtzite III–Nitride Distributed Bragg Reflectors on Si(100) Substrates

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概要

• 論文の詳細を見る

• Distributed Bragg reflectors (DBRs) composed of an AlN/GaN superlattice were demonstrated for the first time on Si(100) substrates. Single-crystal wurtzite superlattice structures were achieved on this cubic substrate by employing offcut Si(100) wafers with the surface normal pointing 4° towards the [110] direction. This misorientation introduced an additional epitaxial constraint that prevented the growth of a two-domain GaN surface as well as cubic GaN inclusions. A crack-free 600 nm GaN cap/$5\times\text{AlN}$/GaN DBR structure on Si(100) was demonstrated. This accomplishment of a wurtzite III–nitride DBRs on Si(100) opens the possibility to integrate novel optical and optoelectronic devices with established Si microelectronics technology.

• Japan Society of Applied Physicsの論文
• 2006-08-25

著者

• Rosenberg Armand

  U.S. Naval Research Laboratory, 4555 Overlook Avenue, SW, Washington, D.C. 20375, U.S.A.

• Henry Rich

  U.S. Naval Research Laboratory, 4555 Overlook Avenue, SW, Washington, D.C. 20375, U.S.A.

• Eddy Charles

  U.S. Naval Research Laboratory, 4555 Overlook Avenue, SW, Washington, D.C. 20375, U.S.A.

• Holm Ron

  U.S. Naval Research Laboratory, 4555 Overlook Avenue, SW, Washington, D.C. 20375, U.S.A.

• Mastro Michael

  U.S. Naval Research Laboratory, 4555 Overlook Avenue, SW, Washington, D.C. 20375, U.S.A.

• Bassim Nabil

  U.S. Naval Research Laboratory, 4555 Overlook Avenue, SW, Washington, D.C. 20375, U.S.A.

• Twigg Mark

  U.S. Naval Research Laboratory, 4555 Overlook Avenue, SW, Washington, D.C. 20375, U.S.A.

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• Wurtzite III–Nitride Distributed Bragg Reflectors on Si(100) Substrates

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