Formation of $\beta$-C3N4 Nanocrystals in Ti-Doped Carbon Nitride Films Prepared by Cathode Arc-Assisted Middle-Frequency Magnetron Sputtering
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概要
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Ti-doped carbon nitride thin films have been deposited by cosputtering Ti and graphite targets in a mixed plasma of Ar and N. Transmission electron microscopy revealed that the nucleation of $\beta$-C3N4 could be promoted by Ti incorporation. The N content of the films was found to strongly depend on Ti concentration, even a small amount of Ti incorporation resulted in a drastic increase in N content. An evolution from amorphous layers with fine mixtures of C, N, and Ti to matrices embedded with $\beta$-C3N4 nanocrystals was observed with increasing bias voltage.
- 2006-06-25
著者
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Yang Bing
Accelerator Laboratory School Of Physics Wuhan University
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Fan Xiangjun
Accelerator Laboratory School Of Physics Wuhan University
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Huang Zhihong
Accelerator Laboratory School Of Physics Wuhan University
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Fu Dejun
Accelerator Laboratory School Of Physics Wuhan University
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Yang Bing
Accelerator Laboratory, School of Physics, Wuhan University, Wuhan 430072, China
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Fu Dejun
Accelerator Laboratory, School of Physics, Wuhan University, Wuhan 430072, China
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Fan Xiangjun
Accelerator Laboratory, School of Physics, Wuhan University, Wuhan 430072, China
関連論文
- Formation of β-C_3N_4 Nanocrystals in Ti-Doped Carbon Nitride Films Prepared by Cathode Arc-Assisted Middle-Frequency Magnetron Sputtering
- Ti-Containing Amorphous Carbon Nanocomposite Coatings Prepared by Means of Eight-Target Arc-Assisted Middle Frequency Magnetron Sputtering
- Formation of $\beta$-C3N4 Nanocrystals in Ti-Doped Carbon Nitride Films Prepared by Cathode Arc-Assisted Middle-Frequency Magnetron Sputtering
- Ti-Containing Amorphous Carbon Nanocomposite Coatings Prepared by Means of Eight-Target Arc-Assisted Middle Frequency Magnetron Sputtering