Origin of Selective Growth of GaN on Maskless V-Grooved Sapphire Substrates by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Selective growth of GaN on maskless V-grooved sapphire substrate is found by metalorganic chemical vapor deposition (MOCVD), where the V-grooved sapphire substrate is fabricated by chemical wet etching. GaN layers grow only on the (0001) mesas and no GaN growth occurs on the $\{1\bar{1}0k\}$ sidewalls of the V-grooves. The origin of the selective growth of GaN is unveiled and analyzed by energy dispersive X-ray (EDX) spectroscopy mapping. It is found that, Ga migration rates on the different facets are different clearly at high temperatures (HTs) so that the selective growth occurs. Contrary to the situation of HTs, GaN nucleates uniformly on the mesas and sidewalls at low temperatures (LTs) without selectivity. Thus, it is concluded that the selective growth of GaN on sapphire facets is a kinetic limited process. Accordingly, it is possible to fabricate GaN-based nanostructures by controlling the growth conditions.
- Japan Society of Applied Physicsの論文
- 2005-07-10
著者
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Wang Jing
State Key Lab. Of Asic And System Department Of Microelectronics Fudan University
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Chen Hong
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100080, China
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Xing Zhi
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100080, China
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Guo Li
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100080, China
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Jia Hai
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100080, China
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Zhou Jun
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100080, China
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Wang Yang
State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100080, China
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