AlGaN/GaN Heterostructure Field-Effect Transistors (HFETs) on Si Substrates for Large-Current Operation

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We demonstrated AlGaN/GaN heterostructure field-effect transistors (HFETs) grown on 2 inch Si (111) substrates by metalorganic chemical vapor phase epitaxy (MOVPE). Using GaN/AlN multilayers, we successfully fabricated nonpitted and crack-free GaN films thicker than 1 μm on Si substrates. An electron mobility of 1200 cm2/V$\cdot$s, a sheet carrier density of $4.5 \times 10^{12}$ /cm2, and a sheet resistance of 1100 $\Omega$/sq were obtained. Fabricated 60-mm-gate-width HFETs exhibited a maximum drain current of more than 10 A, an on-state resistance of 0.5 $\Omega$, and a breakdown voltage of more than 350 V.
2004-07-01