Role of AlN/GaN Multilayer in Crack-Free GaN Layer Growth on 5"φ Si (111) Substrate
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概要
- 論文の詳細を見る
- 2004-12-15
著者
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OHTSUKA Kohji
Semiconductor Research and Development, Sanken Electric Co., Ltd.
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SUGAHARA Tomoya
Semiconductor Research and Development, Sanken Electric Co., Ltd.
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LEE Jeong-Sik
Semiconductor Research and Development, Sanken Electric Co., Ltd.
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Sugahara Tomoya
Semiconductor Research And Development Sanken Electric Co. Ltd.
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Ohtsuka Kohji
Semiconductor Research And Development Sanken Electric Co. Ltd.
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Lee Jeong-sik
Semiconductor Research And Development Sanken Electric Co. Ltd.
関連論文
- Role of AlN/GaN Multilayer in Crack-Free GaN Layer Growth on 5"φ Si (111) Substrate
- AlGaN/GaN Heterostructure Field-Effect Transistors (HFETs) on Si Substrates for Large-Current Operation
- AlGaN/GaN Heterostructure Field-Effect Transistors (HFETs) on Si Substrates for Large-Current Operation