Fluoride Antireflection Multilayers with High Transmittance for ArF Excimer Laser by Ion Beam Sputtering Method

概要

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Fluoride antireflection multilayers were developed by ion beam sputtering method. Although fluoride multilayers fabricated by ion beam sputtering method are known to have good morphology and low scattering loss, their absorption loss appeared to be difficult to reduce. In this work, we succeeded in reducing their absorption loss by the optimization of the fabrication conditions. As a result, the extinction coefficients of each fluoride layer were of the order of $10^{-4}$ and the transmittance of our antireflection multilayer drastically increased up to 99.6% at the wavelength of 193.4 nm. To our knowledge, this is the highest transmittance ever achieved using ion beam sputtering method. We showed the strong potential of fluoride multilayers, fabricated by ion beam sputtering method, for industrial applications such as lithography systems, which used ArF excimer lasers.
Japan Society of Applied Physicsの論文
2004-02-15