Improvement of Optical Properties of Air-Exposed Regrowth Interfaces Embedded in InAs Quantum Dots and GaAs/AlGaAs Quantum Wells by Atomic Hydrogen

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概要

• 論文の詳細を見る

• We report an atomic hydrogen cleaning effect on surface oxide and contaminants on airexposed interfaces embedded in GaAs quantum well (QW) and InAs quantum dot (QD). A partly grown GaAs QW and a GaAs buffer layer for InAs QDs were air-exposed and hydrogen cleaned. After this procedure, we directly regrew a GaAs QW and InAs QDs as an active layer. Removal of surface oxide was monitored by reflection high-energy electron diffraction. The cleaned surface showed $\beta(2\times 4)$ reconstruction. The photoluminescence properties of GaAs/AlGaAs QWs and InAs/GaAs QDs showed no degradation compared with those of the reference samples, even though the air-exposed interfaces were included in the active regions.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2004-01-15

著者

• Koguchi Nobuyuki

  Nanomaterials Laboratory National Institute For Materials Science

• KIM Jong

  Nanomaterials Laboratory, National Institute for Materials Science

• KAWABE Mitsuo

  Nanomaterials Laboratory, National Institute for Materials Science

• Kim Jong

  Nanomaterials Laboratory, National Institute for Materials Science, Tsukuba 305-0047, Japan

関連論文

• Improvement of Optical Properties of Air-Exposed Regrowth Interfaces Embedded in InAs Quantum Dots and GaAs/AlGaAs Quantum Wells by Atomic Hydrogen
• Direct Formation of GaAs/AlGaAs Quantum Dots by Droplet Epitaxy
• Comparison between Electron Beam and Near-Field Light on the Luminescence Excitation of GaAs/AlGaAs Semiconductor Quantum Dots
• Improvement of Optical Properties of Air-Exposed Regrowth Interfaces Embedded in InAs Quantum Dots and GaAs/AlGaAs Quantum Wells by Atomic Hydrogen

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