Improvement of Optical Properties of Air-Exposed Regrowth Interfaces Embedded in InAs Quantum Dots and GaAs/AlGaAs Quantum Wells by Atomic Hydrogen

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概要

• 論文の詳細を見る
• 2004-01-15

著者

• Koguchi Nobuyuki

  Nanomaterials Laboratory National Institute For Materials Science

• KIM Jong

  Nanomaterials Laboratory, National Institute for Materials Science

• KAWABE Mitsuo

  Nanomaterials Laboratory, National Institute for Materials Science

関連論文

• Improvement of Optical Properties of Air-Exposed Regrowth Interfaces Embedded in InAs Quantum Dots and GaAs/AlGaAs Quantum Wells by Atomic Hydrogen
• Direct Formation of GaAs/AlGaAs Quantum Dots by Droplet Epitaxy
• Comparison between Electron Beam and Near-Field Light on the Luminescence Excitation of GaAs/AlGaAs Semiconductor Quantum Dots
• Improvement of Optical Properties of Air-Exposed Regrowth Interfaces Embedded in InAs Quantum Dots and GaAs/AlGaAs Quantum Wells by Atomic Hydrogen

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