Molecular-Beam Epitaxial Growth of ZnMgCdS Layers and Their Application to UV-A Photodetectors
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概要
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Zincblende ZnMgCdS quaternary alloy layers were grown by molecular-beam epitaxy. The ZnMgCdS alloy lattice matched with GaAs and exhibited the band-gap energy of approximately 3 eV. Zn, Mg, and CdS were used as source materials. Cd was replaced by Zn or Mg, and the alloy composition was controlled when the growth temperature was set to approximately 210°C. Low-temperature photoluminescence showed dominant band-edge features indicating the high quality of the epilayer. The epilayer was applied to the metal-semiconductor-metal photodetector, and visible-blind UV sensing characteristics were observed.
- Japan Society of Applied Physicsの論文
- 2003-09-15
著者
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Hirose Fumiaki
Kagami Memorial Laboratory For Materials Science And Engineering Waseda University
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Katsuta Shohei
Kagami Memorial Laboratory for Materials Science and Engineering, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan
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Enami Masaaki
Kagami Memorial Laboratory for Materials Science and Engineering, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan
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Tsutsumi Kazuaki
Kagami Memorial Laboratory for Materials Science and Engineering, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan
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Kobayashi Masakazu
Kagami Memorial Laboratory for Materials Science and Engineering, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan
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Hirose Fumiaki
Kagami Memorial Laboratory for Materials Science and Engineering, Waseda University, 2-8-26 Nishiwaseda, Shinjuku-ku, Tokyo 169-0051, Japan