Contact Resistance in Schottky Contact Gated-Four-Probe a-Si Thin-Film Transistor

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概要

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• The source and drain electrode contact resistance of the hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with a Schottky-barrier source/drain contact was measured using a gated-four-probe TFT structure. Typically its variation with the gate bias is considered to be independent of the gate bias but we observed that contact resistances decrease exponentially with increasing gate bias. Our experimental data are explained by a combination of the tunneling current through the Schottky barrier and the access source/drain contact TFT resistance.

• Japan Society of Applied Physicsの論文
• 2003-08-01

著者

• Hattori Reiji

  Solid-state Electronics Laboratory Department Of Electrical Engineering And Computer Science The Uni

• Kanicki Jerzy

  Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, U.S.A.

• Kanicki Jerzy

  Solid-State Electronics Laboratory, The University of Michigan, Ann Arbor, MI 48109-2108, U.S.A.

• Hattori Reiji

  Solid-State Electronics Laboratory, The University of Michigan, Ann Arbor, MI 48109-2108, U.S.A.

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• Contact Resistance in Schottky Contact Gated-Four-Probe a-Si Thin-Film Transistor

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