In Situ Resistance Measurement of Nickel-Induced Lateral Crystallization of Amorphous Silicon
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概要
- 論文の詳細を見る
In situ resistance measurement has been carried out to study the nickel-induced lateral crystallization process of amorphous silicon thin film with and without lateral electrical field enhancement. In both cases, the resistance decays exponentially with annealing time. The decay behavior is strongly dependent on temperature and electric field. The field enhancement effect has been demonstrated by a field enhancement factor calculated from in situ resistance measurement results. This in situ resistance measurement method can potentially be used for monitoring metal-induced lateral crystallization processes of amorphous silicon.
- Japan Society of Applied Physicsの論文
- 2003-08-01
著者
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Li Junfeng
School Of Aerospace Tsinghua University
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Qi Guojun
Surface Technology Group Singapore Institute Of Manufacturing Technology
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Sun Xiaowei
School Of Electrical And Electronic Engineering Nanyang Technological University
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Zeng Xiangbin
School Of Electrical And Electronic Engineering Nanyang Technological University
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Zeng Xiangbin
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798 Singapore
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Qi Guojun
Surface Technology Group, Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075 Singapore
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Sun Xiaowei
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798 Singapore
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Li Junfeng
School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798 Singapore
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