Self-Organization of Silicon Dots Grown by Thermal Decomposition of HSiO3/2 Gels

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Silicon crystallites embedded in thin silica films were prepared by the sol-gel route, using triethoxysilane as a precursor. The films of silicon crystallites were either obtained as free-standing films or were deposited on (001)-oriented silicon or glass substrates by a spin coating deposition of a liquid phase that was further heat-treated under static vacuum. It was found out that the processing temperature impacts both the silicon dot size and the density of dots. We also deposited such crystallites on silicon using the thermal decomposition of the dried gels under vacuum. In the latter case, two regimes of the silicon dot growth have been observed depending on the decomposition temperature. Specifically, at $T\approx 800$°C (regime I) the round-shaped silicon dots are virtually randomly distributed across the substrate surface, whereas the regime II at $T\approx 1000$°C is characterized by growth of the elongated silicon dots arranged in nanochains along the ($1\pm 10$) axis.
2003-06-01