T4 Site Adsorption of Tl Atoms in a Si(111)-($1\times 1$)-Tl Structure, Determined by Low-Energy Electron Diffraction Analysis
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概要
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A ($1\times 1$) structure formed on Si(111)$7\times 7$ by thallium (Tl) atom deposition and subsequent annealing has been determined by tensor low-energy electron diffraction (LEED) analysis. Six adsorption sites of Tl atoms on a bulk-truncated surface were examined. The on-top site adsorption of Tl, which was previously deduced from scanning tunneling microscopy images and attributed to the monovalent nature of Tl, is excluded in this LEED analysis. It is concluded that the T4 site is the most optimal. Since the surface forms the ($1\times 1$) periodicity, the T4 site adsorption is highly anomalous among metal deposited Si(111) surfaces.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-03-15
著者
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Mizuno Seigi
Department Of Molecular And Material Sciences Kyushu University
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Chung Jinwook
Physics Department And Basic Science Research Institute Pohan University Of Science And Technology
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Tochihara Hiroshi
Department Of Applied Physics Kyushu University
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Noda Takayuki
Department Of Hospital Pharmacy And Pharmacokinetics Aichi Medical University School Of Medicine
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Noda Takayuki
Department of Molecular and Material Sciences, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
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- T4 Site Adsorption of Tl Atoms in a Si(111)-($1\times 1$)-Tl Structure, Determined by Low-Energy Electron Diffraction Analysis