In situ Scanning Tunneling Microscopy Observation of the Unreconstructed Region in a Quenched Si(111)Surface : Dynamic Size-Conversion of the Stacking-Faulted Half of the DAS Strusture

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概要

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• The DAS 7 x7 strrface strtrcttrre is knoxvn to be the rnost stable on Si(Ill), and we investigatedits fornaation mechanisna by scanning tttnneling zaaicroscopy. Triangtmlar narrow trnreconstrtrcted-regions ("lxl"), prepared on terraces by qtrenching, are chosen for in situ observation of thefornaatiora of the trnit cell of the DAS T'><T at abotrt 25O'C. It is demonstrated thart the singlestacking-fatrlted half of the unit cell is forraaed or annihilated dynamically in a structural sequenceof "lxl"++5x5++7x7e9x9. The f'attlted half' is stabilized when another neighboring faulted-half of the sarne size is formed during its lifetime. We pIO])OS(2 a fornaation uaaodel for the 7x7unit cell.

• 社団法人日本物理学会の論文
• 1998-05-15

著者

• Shimada Wataru

  National Institute Of Advanced Industrial Science And Technology(aist)

• TOCHIHARA Hiroshi

  Department of Molecular and Material Sciences, Kyushu University

• Taniguchi Masahiro

  Faculty Of Science Hokkaido University

• YAMAMOTO Hiroshi

  Research Institute of Innovative Technology for the Earth (RITE)

• Tochihara Hiroshi

  Department Of Applied Physics Kyushu University

• Shimada Wataru

  National Institute Of Polar Research

• TANIGUCHI Masahiro

  Fasulty of Science,Hokkaido University

• YAMAGISHI Akihiko

  Fasulty of Science,Hokkaido University

• Shimada Wataru

  National Institute Of Advanced Industrial Science And Technology (aist)

• Yamagishi Akihiko

  Faculty Of Science Hokkaido University

• Yamamoto Hiroshi

  Research Center For Advanced Science And Technology University Of Tokyo

• Yamamoto Hiroshi

  Research Center Asahi Glass Co. Ltd.

• TOCHIHARA Hiroshi

  Department of Applied Physics,Kyushu University

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