Observation of Small Temperature Variation of Longitudinal-Mode Peak Wavelength in TlInGaAs/InP Laser Diodes

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概要

• 論文の詳細を見る

• To fabricate temperature-insensitive wavelength laser diodes (LDs), which are important in the wavelength division multiplexing optical fiber communication system, we have studied TlInGaAs/InP heterostructures. TlInGaAs/InP metal-stripe LDs were fabricated with gas source molecular-beam epitaxy. Current-injection pulsed-laser operation was obtained up to 310 K. Threshold current density and lasing wavelength at room temperature were 7 kA/cm2 and 1660 nm, respectively. The observed temperature variation of the longitudinal-mode peak wavelength was as small as 0.06 nm/K. This value is much smaller than that observed for distributed feed-back LDs (0.1 nm/K). This is considered to result from the addition of Tl into the LD active layer.

• Japan Society of Applied Physicsの論文
• 2003-11-15

著者

• Asahi Hajime

  ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

• Fujiwara Atsushi

  ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

• Lee Hew-Jae

  ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

• Imada Akinori

  ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

• Hasegawa Shigehiko

  ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

関連論文

• Observation of Small Temperature Variation of Longitudinal-Mode Peak Wavelength in TlInGaAs/InP Laser Diodes

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