Terahertz Radiation Mechanism from Femtosecond-Laser-Irradiated InAs (100) Surface
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概要
- 論文の詳細を見る
Terahertz (THz) radiation mechanism from femtosecond-laser-irradiated InAs surface is investigated by measuring the excitation-fluence dependence of THz-radiation power. It is found that the THz-radiation is mainly generated by the surge-current, which originates from the different diffusion velocities between photoexcited electrons and holes. Furthermore, it is also found that the excitation fluence dependence of THz-radiation is categorized into two regions depending on the excitation fluence. At low excitation fluence, a quadratic-dependent enhancement of the THz-radiation power is observed with increasing excitation fluence. In contrast, at high excitation fluence, the enhancement factor is gradually reduced, and the radiation power becomes proportional to a logarithm function of the excitation fluence. These results are explained by considering the photo-Dember field as the THz-radiation source.
- 2003-10-15
著者
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QUEMA Alex
Institute for Molecular Science
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Goto Masahiro
Institute For Molecular Science (ims)
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Ono Shingo
Department Of Engineering Physics Electronics And Machanics Graduate School Of Engineering Nagoya In
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SARUKURA Nobuhiko
Department of Photo Science, The Graduate University for Advanced Studies
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Takahashi Hiroshi
Department Of Applied Aquabiology National Fisheries University
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Ono Shingo
Department of Photo Science, The Graduate University for Advanced, Shonan Village, Hayama 240-0193, Japan
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Sarukura Nobuhiko
Department of Photo Science, The Graduate University for Advanced, Shonan Village, Hayama 240-0193, Japan
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