A Novel Growth Approach of Ultrasmall Ge and Si Nanoclusters on a Si(100) Substrate without a Wetting Layer

概要

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Growth of ultrasmall Ge and Si nanoclusters has been achieved on a Si(100) substrate in the use of Xe buffer layer. The temporary use of Xe buffer layer, which has the low surface free energy, leads to nanoclusters formation on Si(100) due to the indirect interaction between deposited Ge or Si atoms and a Si(100) substrate. The formation of Ge and Si nanoclusters on Si(100) surface without a wetting layer was confirmed by the scanning tunneling microscope observation. Ge nanoclusters are much smaller and denser than that are grown by the Stranski-Krastanov mode.
Japan Society of Applied Physicsの論文
2003-10-15