Effect of Device Temperature on Domain Wall Motion in a Perpendicularly Magnetized Co/Ni Wire
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概要
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This paper describes experimental results obtained from measuring the dependence of device temperature on the current for domain wall motion in a Co/Ni wire having perpendicular magnetic anisotropy. Devices with different insulating layer thicknesses were prepared in order to control the device temperature. A stable domain wall motion was observed up to the temperature at which perpendicular magnetic anisotropy vanishes. Moreover, the current required for domain wall motion was independent of the device temperature.
- 2011-01-25
著者
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FUKAMI Shunsuke
NEC Corporation
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ISHIWATA Nobuyuki
NEC Corporation
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Suzuki Tetsuhiro
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo, Sagamihara 252-5298, Japan
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Tanigawa Hironobu
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo, Sagamihara 252-5298, Japan
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Ohshima Norikazu
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo, Sagamihara 252-5298, Japan
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Suemitsu Katsumi
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Kariyada Eiji
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Ishiwata Nobuyuki
NEC Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Fukami Shunsuke
NEC Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Tanigawa Hironobu
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Suzuki Tetsuhiro
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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Ohshima Norikazu
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo-ku, Sagamihara 252-5298, Japan
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