Stack Structure Dependence of Co/Ni Multilayer for Current-Induced Domain Wall Motion
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概要
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We developed a film stack structure of Co/Ni with perpendicular magnetic anisotropy (PMA), which is suitable for current-induced domain wall (DW) motion. A Ta/Pt underlayer effectively provided a sufficiently large PMA to achieve the DW motion driven by a small current. The critical current density ($\aki j_{\text{c}}$) had a minimum value at a Pt underlayer thickness ($t_{\text{UL}}$) of 2.4 nm and was insensitive to cap layer thickness ($t_{\text{cap}}$). The de pendence of $j_{\text{c}}$ on $t_{\text{UL}}$ and $t_{\text{cap}}$ can be accounted for in terms of the effective spin polarization.
- 2010-11-25
著者
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TANIGAWA Hironobu
NEC Corporation
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FUKAMI Shunsuke
NEC Corporation
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SUZUKI Tetsuhiro
NEC Corporation
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ISHIWATA Nobuyuki
NEC Corporation
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Ohshima Norikazu
Nec Corporation
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Suzuki Tetsuhiro
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo, Sagamihara 252-5298, Japan
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Tanigawa Hironobu
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo, Sagamihara 252-5298, Japan
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Ohshima Norikazu
Renesas Electronics Corporation, 1120 Shimokuzawa, Chuo, Sagamihara 252-5298, Japan
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