Selective Sputtering of Impurity Hydrogen Atoms from a GaN(0001) Surface by Slow Multicharged Ion Impact

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概要

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• Time-of-flight secondary ion mass spectrometry was conducted for slow multicharged Arq+ ($q = 4$, 6, or 8) impact on a GaN(0001) surface. Selective sputtering of protons from impurities was demonstrated. The relative intensity of protons increased with an increase in the charge state $q$, and it reached 92% in the case of Ar8+ incidence with scattering Ar+. The width of the proton spectrum measured in coincidence with scattering Ar+ ions was almost equal to that of Ar atoms in Ar8+ impacts. These facts suggest that the potential sputtering rather than the kinetic sputtering of impurities was dominant in the Ar8+ impact.

• 2010-12-25

著者

• Motohashi Kenji

  Department Of Applied Physics Faculty Of Technology Tokyo University Of Agriculture And Technology

• Motohashi Kenji

  Department of Biomedical Engineering, Faculty of Science and Engineering, Toyo University, Kawagoe, Saitama 350-8585, Japan

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