Structural Changes of Photoresist on Wafer Studied by Pyrolysis-GC/MS Combined with Micro-GPC

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概要

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• A novel method for the direct analysis of photoresist pattern was developed on the basis of Pyrolysis-GC/MS combined with micro-GPC. Firstly, a new sampling technique allowed us to collect the surface and the core of the photoresist pattern separately. Moreover, μGPC and Py-GC/MS analyses provide the information for the distribution of resist ingredient inside resist pattern, which includes original polymer, reacted polymer, and photo acid generator through the ArF patterning process. This novel analytical method can provide remarkably helpful information about identifying proper control knobs for lithographic performance of ArF resist and for next generation lithography.

• The Society of Photopolymer Science and Technology (SPST)の論文

著者

• Kimura Tooru

  Jsr Corp. Mie Jpn

• Taguchi Yoshihiko

  Toray Research Center Inc.

• Kawai Kazuki

  Toray Research Center Inc.

• Otsuki Akiko

  Toray Research Center Inc.

• Man Naoki

  Toray Research Center Inc.

• Mochida Kenji

  JSR Corporation, Semiconductor Materials Laboratory, Fine Electronic Research Laboratories

• Nakamura Shinichi

  JSR Corporation, Semiconductor Materials Laboratory, Fine Electronic Research Laboratories

関連論文

• JSR EUV resist development toward 22nmhp design and beyond
• Structural Changes of Photoresist on Wafer Studied by Pyrolysis-GC/MS Combined with Micro-GPC

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