A 60GHz Power Amplifier with 10GHz 1-dB Bandwidth and 13.6% PAE in 65nm CMOS
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概要
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A four-stage power amplifier (PA) with 10GHz 1-dB bandwidth (56-66GHz) is presented. The broadband performance is achieved owing to π-section interstage matching network. Three-stage-current-reuse topology is proposed to enhance efficiency. The amplifier has been fabricated in 65nm digital CMOS. 18dB power gain and 9.6dBm saturated power (Psat) are achieved at 60GHz. The PA consumes current of 50mA at 1.2V supply voltage, and has a peak power-added efficiency (PAE) of 13.6%. To the best of the authors' knowledge, this work shows the highest PAE among the reported CMOS PAs that covers the worldwide 9GHz ISM millimeter-wave band with less-than-1.2V supply voltage.
著者
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WATANABE Osamu
Toshiba Corporation
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Mitomo Toshiya
Toshiba Corp. Kawasaki‐shi Jpn
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Wang Tong
Toshiba Corporation
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Ono Naoko
Toshiba Corporation
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SAIGUSA Shigehito
Toshiba Corporation
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