Page overwriting method for performance improvement of NAND flash memories

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概要

• 論文の詳細を見る

• This paper presents a novel page overwriting scheme for NAND flash memory. It provides significantly improved in-place page update with minimum hardware overhead. It does not require valid page copy for erase operation in order to modify data in a written page. Experimental results show 3.3 ∼ 47.5 times faster page update time with one overwrite allowance and 1.3 ∼ 18.7 with four overwrites allowance compared with conventional method.

著者

• CHUNG Eui-Young

  School of Electrical and Electronic Engineering, Yonsei University

• Chung Eui-young

  School Of Electrical And Electronic Engineering Yonsei University

• Chung Junseop

  Flash Development Division, SK-Hynix Semiconductor

• Won Samkyu

  School of Electrical and Electronic Engineering, Yonsei University

• Kim Duckju

  Flash Development Division, SK-Hynix Semiconductor

• Han Bongseok

  Flash Development Division, SK-Hynix Semiconductor

• Lee Hyukjun

  Dept. of Computer Science and Engineering, Sogang University

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• Page overwriting method for performance improvement of NAND flash memories

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