Multi-level programming of memristor in nanocrossbar

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概要

• 論文の詳細を見る

• Utilizing memristor to obtain multi-level memory in nano-crossbar is a promising approach to enhance the memory density. In this paper, we proposed a solution for multi-level programming of memristor in nanocrossbar, which can be implemented on nanocrossbar without the need for extra selective devices. Meanwhile, using a general device model, this solution is demonstrated to be adaptive to a wide range of memristors that have been experimentally fabricated through HSPICE simulation.

• The Institute of Electronics, Information and Communication Engineersの論文

著者

• Yi Xun

  State Key Laboratory of High Performance Computing, National University of Defense Technology

• Zhu Xuan

  State Key Laboratory of High Performance Computing, National University of Defense Technology

• Wu Chunqing

  School of Computer, National University of Defense Technology

• Wu Junjie

  State Key Laboratory of High Performance Computing, National University of Defense Technology

• Tang Yuhua

  State Key Laboratory of High Performance Computing, National University of Defense Technology

関連論文

• Hamming network circuits based on CMOS/memristor hybrid design
• Multi-level programming of memristor in nanocrossbar

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