Millimeter-wave Transmission Line with Through-silicon Via for RF-MEMS Devices
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概要
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We designed and fabricated a low-loss transmission line structure with through-silicon vias (TSVs) for use in the millimeter-wave region for three-dimensional packaging of radio frequency microelectromechanical system devices. High-frequency simulations were used to determine the optimum transmission line structure. A transformer was employed to compensate for the impedance mismatch between the TSVs and the coplanar waveguide. The proposed structure was fabricated using a combination of surface micromachining and the molten solder ejection method. The electrical properties of the TSVs and the transmission line were measured, and a low insertion loss of 0.7 dB at 80 GHz was achieved.
著者
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FUJII Yoshio
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Yuasa Takeshi
Information Technology R&d Center Mitsubishi Electric Corporation
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Tahara Yukihiro
Information Technology R&d Center Mitsubishi Electric Corporation
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Yuasa Takeshi
Information Technology R&D Center, Mitsubishi Electric Co.
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Tahara Yukihiro
Information Technology R&D Center, Mitsubishi Electric Co.
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Ogawa Shinpei
Advanced Technology R&D Center, Mitsubishi Electric Co.
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Fukumoto Hiroshi
Advanced Technology R&D Center, Mitsubishi Electric Co.
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Ogawa Shinpei
Advanced Technology R&D Center, Mitsubishi Electric Co.
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Fukumoto Hiroshi
Advanced Technology R&D Center, Mitsubishi Electric Co.
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