Fabrication of Ordered Nanostructure on Silicon Substrate Using Localized Anodization and Chemical Etching

概要

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Nanofabrication processes of Si substrates based on localized anodization and subsequent chemical etching were investigated. The anodization procedure of aluminum sputtered on a Si substrate was monitored by measuring the current transient at a constant voltage. The porous alumina with a self-ordered configuration acted as a mask for the localized anodization of the underlying Si substrate and controlled the position of the silicon oxide pattern, which was produced only in the Al2O3/Si interface. The transfer of the geometric pattern of anodic porous alumina into a Si substrate could be achieved by two independent processes: i) the hole array structure can be obtained by the selective removal of silicon oxide from the Si substrate using wet etching in HF solution; and ii) the column array structure can be obtained by the selective etching of Si substrate in KOH solution using silicon oxide as a mask. Based on this approach, the different nanostructures could be obtained arbitrarily by the selection of appropriate local anodization stages and etching conditions.
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