A Release Property of High-Permittivity Thin Film Manufactured with Nano-Transfer Method
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概要
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It is useful to be able to further miniaturize printed wiring boards (PWBs) to achieve more compact and multi-functional mobile electronics. Since about 40–50% of the surface of a PWB is covered with passive elements such as capacitors, it is clear that miniaturization would improve performance. On the other hand, PWBs have a low temperature resistance, and thus the boards cannot use capacitors that require higher processing temperatures. The nano-transfer method, which consists of release and transfer steps, solves this problem. After the capacitor is fabricated on a high-temperature-resistant substrate, it is released from the substrate and mounted on the PWB. The purpose of this study is to clarify the release process in order to establish a fabrication technology for embedded substrates.
著者
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IIMURA K.
Department of Mechanical and System Engineering, University of Hyogo
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Suga T.
Department Of Dermatology Kagoshima University Faculty Of Medicine
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Ichiki M.
Department of Precision Engineering, School of Engineering, University of Tokyo
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Hosono T.
Department of Precision Engineering, School of Engineering, University of Tokyo
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Itoh T.
National Institute of Advanced Industrial Science and Technology (AIST)
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